Topological Insulator-Based High Efficiency Switching of Magnetic Unit, Method and Application

Case ID:
C14126
Disclosure Date:
4/11/2016
Description:
Unmet Need: The invention meets the need for improved magnetic random access memory, racetrack memory, and spin logic devices.  The present state of the art of electrical current by spin-orbital torque (SOT) consists of a single heavy metal layer (e.g., W or Ta) in contact with a ferromagnetic layer, which acquires perpendicular magnetic moment suitable for high-density storage. An electrical current passing through the heavy metal layer with enough current density will enable SOT switching of the magnetic moment. This required current density is typically greater than 107 A/cm2, which is close to the breakdown limit of the device.

 Technology Overview: The new technology is a new design of devices that use a novel class of materials known as the topological insulators.  This design with these materials have the capability to produce strong SOT that would lower the required switching current density by up to one order of magnitude. The disclosed invention shall enable future memory devices with the consumed energy density reduced by up to 100 times comparing to the current state of art. 

Stage of Development: This technology is currently being developed at Johns Hopkins University. 
Patent Information:
Title App Type Country Serial No. Patent No. File Date Issued Date Expire Date Patent Status
Topological Insulator-Based High Efficiency Switching of Magnetic Unit, Method and Application ORD: Ordinary Utility United States 15/497,591 4/26/2017     Pending
Inventors:
Category(s):
For Information, Contact:
Seth Zonies
szonies1@jhmi.edu
410-614-0300
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