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Topological Insulator-Based High Efficiency Switching of Magnetic Unit, Method and Application

Unmet Need: The invention meets the need for improved magnetic random access memory, racetrack memory, and spin logic devices. The present state of the art of electrical current by spin-orbital torque (SOT) consists of a single heavy metal layer (e.g., W or Ta) in contact with a ferromagnetic layer, which acquires perpendicular magnetic moment suitable...

Published: 6/27/2024 | Inventor(s): Yufan Li, Qinli Ma, Chia-Ling Chien

Keywords(s): Electric Communication Technique, Electricity, Industrial Manufacturing, Insulative Materials (Insulators), Novel Materials, Semiconductive Materials (Semiconductors), Topological Insulators

Category(s): Technology Classifications > Industrial Tech > Energy, Infrastructure & Environment, Technology Classifications > Industrial Tech, Technology Classifications > Industrial Tech > Materials, Technology Classifications > Engineering Tech > Materials