Copper Metallization Structure and Method of Construction

Case ID:
C01417
Disclosure Date:
10/29/1998

C01417: Copper Metallization Structure and Method of Construction

Value Proposition:

An interconnect system made of copper, as compared to aluminum which is widely used today in the semiconductor industry, has electromigration effects and therefore can carry a higher maximum current density and allow faster transport of electrons. The process of the invention requires a minimal number of steps and does not need a seed layer, thus reducing production costs and drastically lowering contamination rates.

Technical Details:

Johns Hopkins seeks a partner to market a novel invention which addresses the need for fast, reliable, performance-oriented interconnects and vias in today's and tomorrow's smaller, faster circuit systems. Specifically, it is a process for producing an interconnect layer of continuous copper, with excellent step coverage and superior adhesion characteristics. While principally directed towards metallizing silicon-based integrated circuits, the invention may also be applicable to other integrated circuits and layered structures.

Looking for Partners:

Integrated circuits, Layered structures



Patent Information:
Title App Type Country Serial No. Patent No. File Date Issued Date Expire Date Patent Status
Copper Metallization Structure and Method of Construction ORD: Ordinary Utility United States 09/184,579 6,309,969 11/3/1998 10/30/2001 11/3/2018 Granted
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For Information, Contact:
Benjamin Saeks
bsaeks1@jh.edu
410-614-0300
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