Process for Polarized-gate Semiconductor Device

Case ID:
C04822
Disclosure Date:
8/19/2005

C04822: Highly Efficient Transistors for Low-Cost Organic Circuitry

Value Proposition:

• Complementary circuits composed of both n-type transistors and p-type transistors consumer less power and produce better quality signals compared to circuits that utilize a single carrier type (either p-type or n-type exclusively).
• Most of the best developed organic semiconductors (OSC) thin films possessing high carrier mobilities are p-type materials.
• A major challenge with the fabrication of high quality n-type transistors is that n-type OSCs are easily degraded in the atmosphere.
• This makes complementary circuits challenging to implement because of the need to pattern more than one organic semiconductor (OSC) material.
• This invention overcomes the challenges by utilizing a fabrication method that by storing a static charge in the gate dielectric before operating the OFET, which allows multiple transistor types in identical geometric shapes to be produced from the same OSC thin film.
• The method used avoids lengthy exposures of the semiconductors to high voltages and chemical treatments that can decompose the semiconductors or contacts.

Technical Details:

The Johns Hopkins University seeks a partner to commercialize a highly efficient and novel method for fabricating multiple types of organic field effect transistors (OFETs) from one organic semiconductor (OSC) thin film. OFETs show promise as building blocks for low-cost, large-area, and flexible electronics for applications such as displays, smart cards, radiofrequency identification (RFID) tags, and sensors.

Looking for Partners:

Organic electronics


Patent Information:
Title App Type Country Serial No. Patent No. File Date Issued Date Expire Date Patent Status
Methods for Producing Multiple Distinct Transistors from a Single Semiconductor ORD: Ordinary Utility United States 11/607,459 7,993,959 12/1/2006 8/9/2011 12/1/2026 Granted
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For Information, Contact:
Lisa Schwier
lschwie2@jhu.edu
410-614-0300
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