Circuit Architectures for Organic Electronic Sensors

C11169: Circuit Architectures for Organic Electronic Sensors

Logic gate device architectures consist of p-type and n-type transistors. Incorporating p- and n- type transistors that are sensitive to an analyte into logic gate structures can increase sensitivity and selectivity. In addition, incorporation can make data measuring, collecting, and interpretation much simpler and easier. In the case where both transistors work in synergy and are electrically sensitive to an analyte, the inverter is also sensitive and can provide greater sensitivity and/or selectivity. An example of a possible synergistic effect is when a transistor displays an increase in current, mobility, or threshold voltage upon analyte exposure and the second transistor displays a decrease in current, mobility, or threshold voltage. Because the output of the inverter is dependent on both transistors (both materials), their opposing changes will be reflected as a summation, creating an overall heightened response compared to either transistor individually.

Technical Details:

When detecting gaseous or solution phase analytes with organic electronic materials, there may be two or more materials that provide different types of responses. These materials can be integrated into an inverter or amplifier device configuration to exploit a synergistic response. The detection of ammonia and amines with p- and n-type materials is one example of this principle.

Looking for Partners:

The specific concept of using higher order structures to afford higher quality electronic sensors can be used to make all types of organic-based sensors. The example given could be used to commercialize ammonia sensors, general amine sensors, and a sensor for a particular amine. Also this technology could be used for TNT sensors, DNT sensors, dihydrogen sulfide sensors, water sensors, particle sensors, ketone sensors, as well as any other analyte that could be detected by an organic material in a transistor setting.