Technology for Reducing Power Consumption in MRAM
JHU REF: C11627
Invention novelty: This invention can electrically control the magnetic field surrounding a magnetic tunnel junction by altering the resistance state of the junction. This occurs at a much lower current density than normal operating conditions.
Value Proposition:
· Lowers switching current density by approximately 10 times
· Uses voltage pulses with smaller current densities to achieve reversible switching
· Compatible with current nonvolatile magnetic random access memories
· Technology allows electric field to penetrate more monolayers and tightly control switching
Technical Details: This invention is a method to control the shape and contour of the magnetic field via small voltage pulses, which allow magnetic switching to occur in MRAM devices. The invention demonstrates that the magnitude and direction of an electric field directly affects the magnetic configuration and resistance of deep layers in a magnetic tunnel junction. Hence, current is lowered to a desirable extent and the technology can be implemented in a low-noise, low energy environment. The effect on magnetic anisotropy is important because the magnitude and direction of the electric field can precisely impact how the magnetic field changes the switching between microelectronic components in the MRAM device.
Looking for Partners: To implement this technology into low-power, MRAM devices that can be adjusted by the electric field, rather than the magnetic field.
Stage of Development: Prototype
Data Availability: Demonstrated effect of electric field on anisotropy of magnetic switching.
Patent Status: Provisional
Publication(s)/Associated Cases:
Wang et al. “Electric-field-assisted switching in magnetic tunnel junctions.” Nature Materials. Volume 9, Pages 721-724. 2010.
