Skyrmion-based Universal Memory Operated by Electric Currents

Unmet Need 
Modern computer rely on a hierarchy of several storage devices. Universal memory combines the advantages of the multiple storage devices and possesses non-volatility, high speed, ultra density, and infinite durability.  Skymions can be used for universal memory, because of their small size, stability, individual creation and annihilation, and facile movement by low currents.

Technology Overview:                               
The inventors have developed a universal memory in which data is carried by skyrmion, a topological magnetic structure. In the invention, data writing, deleting, and reading are effected with electric currents. In particular, the invention comprises depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.

Publications: 
United States Patent Application 20170018297

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